CVD-prepared PbSe films for mid-IR photodetectors with high detectivity
Author:
Affiliation:
1. Lobachevsky University, Gagarin av. 23,Nizhny Novgorod,Russia,603950
2. Aston University, Aston St,Birmingham,United Kingdom,B4 7ET
Publisher
IEEE
Link
http://xplorestaging.ieee.org/ielx8/10647220/10647120/10648010.pdf?arnumber=10648010
Reference25 articles.
1. Thermoelectrical properties of ternary lead chalcogenide plumbum-selenium-tellurium thin films with excess of tellurium prepared by plasma-chemical vapor deposition
2. New Generation of Materials for the Near-Mid IR Sensors Based on Lead Chalcogenides
3. Optical emission spectroscopy of lead sulfide films plasma deposition
4. Enhancement of IR transparency of arsenic sulfide materials via plasma-chemical conversion of the initial arsenic monosulfide in low-temperature RF plasma
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