New Generation of Materials for the Near-Mid IR Sensors Based on Lead Chalcogenides-Reference-Cited by-同舟云学术

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New Generation of Materials for the Near-Mid IR Sensors Based on Lead Chalcogenides

Published:2019-07 Issue: Volume: Page:
ISSN:
Container-title:2019 21st International Conference on Transparent Optical Networks (ICTON)
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Author:

Mochalov Leonid,Logunov Alexander,Sazanova Tatyana,Vorotyntsev Vladimir

Publisher

IEEE

Link

http://xplorestaging.ieee.org/ielx7/8827188/8839988/08839997.pdf?arnumber=8839997

Cited by 7 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Structural properties and Luminescence of PECVD-prepared β-Ga₂O₃⸳ZnO thin films;2024 24th International Conference on Transparent Optical Networks (ICTON);2024-07-14

2. Structural and Optical Properties of PECVD-prepared Cadmium Telluride Thin Films;2024 24th International Conference on Transparent Optical Networks (ICTON);2024-07-14

3. CVD-prepared PbSe films for mid-IR photodetectors with high detectivity;2024 24th International Conference on Transparent Optical Networks (ICTON);2024-07-14

4. Gas Sensors Based on Chalcogenides;Smart Nanostructure Materials and Sensor Technology;2022

5. Preparation of gallium of the special purity for semiconductors and optoelectronics;Separation and Purification Technology;2021-03

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