Relationship between Gallium Concentration and Resistivity of Gallium-Doped Czochralski Silicon Crystals: Investigation of a Conversion Curve
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference21 articles.
1. Minority carrier lifetime degradation in boron-doped Czochralski silicon
2. Characterization of the Initial Rapid Decay on Light-Induced Carrier Lifetime and Cell Performance Degradation of Czochralski-Grown Silicon
3. Boron Determination in Silicon by the Nuclear Track Technique
4. Resistivity‐Dopant Density Relationship for Boron‐Doped Silicon
5. Diffusion of Boron from Shallow Ion Implants in Silicon
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5. Temperature Dependences of Acceptor Concentration, Conductivity Mobility, and Resistivity of Ga-Doped Czochralski-Si Crystals;Japanese Journal of Applied Physics;2009-03-23
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