Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography-Reference-Cited by-同舟云学术

Characterization of electrical properties in axial Si-Ge nanowire heterojunctions using off-axis electron holography and atom-probe tomography

Published:2016-09-13 Issue:10 Volume:120 Page:104301
ISSN:0021-8979
Container-title:Journal of Applied Physics
language:en
Short-container-title:J. Appl. Phys.

Author:

Gan Zhaofeng¹,Perea Daniel E.²,Yoo Jinkyoung³,He Yang⁴,Colby Robert J.²,Barker Josh E.²,Gu Meng²,Mao Scott X.⁴,Wang Chongmin²,Picraux S. T.³^ORCID,Smith David J.¹,McCartney Martha R.¹

Affiliation:

1. Department of Physics, Arizona State University, Tempe, Arizona 85287, USA

2. Environmental Molecular Sciences Laboratory, Pacific Northwest National Laboratory, Richland, Washington 99352, USA

3. Center for Integrated Nanotechnologies, Los Alamos National Laboratory, Los Alamos, New Mexico 87545, USA

4. Department of Mechanical Engineering and Materials Science, University of Pittsburgh, Pennsylvania 15261, USA

Funder

U.S. Department of Energy (DOE)

Publisher

AIP Publishing

Subject

General Physics and Astronomy

Link

http://aip.scitation.org/doi/pdf/10.1063/1.4962380

Reference32 articles.

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5. Controlling Heterojunction Abruptness in VLS-Grown Semiconductor Nanowires via in situ Catalyst Alloying

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