Effective bulk doping concentration of diffused and undiffused silicon wafers obtained from combined photoconductance and photoluminescence measurements-Reference-Cited by-同舟云学术

Effective bulk doping concentration of diffused and undiffused silicon wafers obtained from combined photoconductance and photoluminescence measurements

Published:2012-03 Issue: Volume: Page:n/a-n/a
ISSN:1062-7995
Container-title:Progress in Photovoltaics: Research and Applications
language:en
Short-container-title:Prog. Photovolt: Res. Appl.

Author:

Hameiri Z.¹,Trupke T.,Gao N.²,Sinton R. A.³,Weber J. W.⁴

Affiliation:

1. Solar Energy Research Institute of Singapore; National University of Singapore; Singapore

2. University of New South Wales; Sydney; Australia

3. Sinton Instruments; 4720 Walnut Street, Suite 102; Boulder; CO; 80301; USA

4. BT Imaging Pty Ltd; 63 Foveaux Street, Upper Ground; Surry Hills; NSW; 2010; Australia

Publisher

Wiley

Subject

Electrical and Electronic Engineering,Condensed Matter Physics,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference41 articles.

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3. Sinton RA Cuevas A Stuckings M Quasi-steady-state photoconductance, a new method for solar cell material and device characterization 25th IEEE Photovoltaic Specialists Conference 1996 457 460

4. Secondary ion mass spectrometry;Williams;Annual Review of Materials Science,1985

5. Doping profile analysis in Si by electrochemical capacitance-voltage measurements;Peiner;Journal of the Electrochemical Society,1995

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