Contactless determination of base resistivity on silicon wafers with highly doped surfaces-Reference-Cited by-同舟云学术

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Contactless determination of base resistivity on silicon wafers with highly doped surfaces

Published:2019-09 Issue: Volume:200 Page:109981
ISSN:0927-0248
Container-title:Solar Energy Materials and Solar Cells
language:en
Short-container-title:Solar Energy Materials and Solar Cells

Author:

Höffler Hannes,Brand Andreas A.,Wirtz Wiebke,Greulich Johannes

Funder

Federal Ministry for Economic Affairs and Energy

Publisher

Elsevier BV

Subject

Surfaces, Coatings and Films,Renewable Energy, Sustainability and the Environment,Electronic, Optical and Magnetic Materials

Reference25 articles.

1. Semiconductor Material and Device Characterization;Schroder,2006

2. Effective bulk doping concentration of diffused and undiffused silicon wafers obtained from combined photoconductance and photoluminescence measurements;Hameiri;Prog. Photovoltaics Res. Appl.,2013

3. Photoluminescence imaging of silicon wafers;Trupke;Appl. Phys. Lett.,2006

4. Quasi-steady-state photoconductance, a new method for solar cell material and device characterization;Sinton,1996

5. Effective excess carrier lifetimes exceeding 100 milliseconds in float zone silicon determined from photoluminescence;Trupke,2004

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-budget photoluminescence imaging;SiliconPV 2021, The 11th International Conference on Crystalline Silicon Photovoltaics;2022

2. Determination of doping concentration of heavily doped silicon wafers using photon reabsorption in photocarrier radiometry;AIP Advances;2020-03-01

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