Fabrication and Characterization of InxGa1-xN Quantum Dots Using Nitridation of Nano-alloyed Droplet Growth Technique-Reference-Cited by-同舟云学术

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Fabrication and Characterization of InxGa1-xN Quantum Dots Using Nitridation of Nano-alloyed Droplet Growth Technique

Published:2008-04-25 Issue:4 Volume:47 Page:3053-3055
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kang Dong-Hun,Kim Dong-Wook,Lee Seon-Ho,Lee Seung-Jae,Kim Jin-Soo,Kannappan Santhakumar,Lee Young-Ki,Lee Cheul-Ro

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference10 articles.

1. Blue InGaN-based laser diodes with an emission wavelength of 450 nm

2. Fabrication of high performance of AlGaN/GaN-based UV light-emitting diodes

3. Improved brightness of 380 nm GaN light emitting diodes through intentional delay of the nucleation island coalescence

4. Metalorganic vapor phase epitaxial growth of a high quality GaN film using an AlN buffer layer

5. Pendeoepitaxy of gallium nitride thin films

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Edge dislocation induced self-assembly of InGaN nano-flower on GaN by metal organic vapor phase epitaxy;Journal of Applied Physics;2011-07

2. Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots;Applied Physics Letters;2009-09-07

3. Growth of InxGa1−xN quantum dots by nitridation of nano-alloyed droplet method using MOCVD;Journal of Crystal Growth;2009-09

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