Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3224897
Reference25 articles.
1. Progress in Growth and Physics of Nitride-Based Quantum Dots
2. Room-temperature lasing oscillation in an InGaN self-assembled quantum dot laser
3. Lasing in Vertical Direction in Structures with InGaN Quantum Dots
4. Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer
5. Electronic and optical properties of InGaN quantum dot based light emitters for solid state lighting
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1. Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor;Materials;2022-09-01
2. Exploring an Approach toward the Intrinsic Limits of GaN Electronics;ACS Applied Materials & Interfaces;2020-02-24
3. Single photon source based on an InGaN quantum dot in a site-controlled optical horn structure;Applied Physics Letters;2019-07-08
4. Effects of laser field and electric field on impurity states in zinc-blende GaN/AlGaN quantum well;Physics Letters A;2011-07
5. Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2010-11
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