Hydrogenic impurity states in zinc-blende symmetric InGaN/GaN multiple quantum dots
Author:
Publisher
Elsevier BV
Subject
Condensed Matter Physics,Atomic and Molecular Physics, and Optics,Electronic, Optical and Magnetic Materials
Reference29 articles.
1. Influence of crystal quality of underlying GaN buffer on the formation and optical properties of InGaN/GaN quantum dots
2. Advantages of blue InGaN multiple-quantum well light-emitting diodes with InGaN barriers
3. Electron dynamics in GaN wafers with an inhomogeneous distribution of defects in the depth direction
4. Localized exciton dynamics in strained cubic In0.1Ga0.9N/GaN multiple quantum wells
5. Hydrogenic impurity states in a wurtzite InGaN quantum dot
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1. Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells: temperature and electric field effects;Philosophical Magazine;2022-07-24
2. The effects of temperature and pressure on the optical properties of a donor impurity in (In,Ga)N/GaN multilayer cylindrical quantum dots;Micro and Nanostructures;2022-03
3. Polaronic mass and non-parabolicity effects on the photoionization cross section of an impurity in a double quantum dot;Superlattices and Microstructures;2021-11
4. Study of hydrostatic pressure, electric and magnetic fields effects on the donor binding energy in multilayer cylindrical quantum dots;Physica E: Low-dimensional Systems and Nanostructures;2021-03
5. Pressure-related binding energy in (In,Ga)N/GaN double quantum wells under internal composition effects;Solid State Communications;2021-03
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