Growth and optical investigation of self-assembled InGaN quantum dots on a GaN surface using a high temperature AlN buffer
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2939568
Reference22 articles.
1. GaN: Processing, defects, and devices
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. Improved characteristics of InGaN multiple-quantum-well laser diodes grown on laterally epitaxially overgrown GaN on sapphire
4. Progress in Growth and Physics of Nitride-Based Quantum Dots
5. Intense photoluminescence from self-assembling InGaN quantum dots artificially fabricated on AlGaN surfaces
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1. Influence of a Two-Dimensional Growth Mode on Electrical Properties of the GaN Buffer in an AlGaN/GaN High Electron Mobility Transistor;Materials;2022-09-01
2. Direct Epitaxial Approach to Achieve a Monolithic On-Chip Integration of a HEMT and a Single Micro-LED with a High-Modulation Bandwidth;ACS Applied Electronic Materials;2021-01-14
3. Controlled growth of InGaN quantum dots on photoelectrochemically etched InGaN quantum dot templates;Journal of Crystal Growth;2020-06
4. Exploring an Approach toward the Intrinsic Limits of GaN Electronics;ACS Applied Materials & Interfaces;2020-02-24
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