A Transmission Electron Microscopy Observation of Dislocations in GaN Grown on (0001) Sapphire by Metal Organic Chemical Vapor Deposition
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering
Reference22 articles.
1. Equilibrium pressure of N2 over GaN and high pressure solution growth of GaN
2. High pressure thermodynamics of GaN
3. GaN Growth Using GaN Buffer Layer
4. Relaxation Mechanism of Thermal Stresses in the Heterostructure of GaN Grown on Sapphire by Vapor Phase Epitaxy
5. Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition
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1. Reduction of threading dislocations in GaN grown on patterned sapphire substrate masked with serpentine channel;Materials Science in Semiconductor Processing;2021-11
2. High efficiency ultraviolet GaN-based vertical light emitting diodes on 6-inch sapphire substrate using ex-situ sputtered AlN nucleation layer;Optics Express;2018-02-20
3. Correlation Between Two-Dimensional Electron Gas Mobility and Crystal Quality in AlGaN/GaN High-Electron-Mobility Transistor Structure Grown on 4H-SiC;Journal of Nanoscience and Nanotechnology;2017-01-01
4. InGaN-Based Light-Emitting Diodes Grown on a Micro/Nanoscale Hybrid Patterned Sapphire Substrate;ACS Applied Materials & Interfaces;2016-12-08
5. Cathodoluminescence study on the impurity behaviors at threading dislocations in GaN;Superlattices and Microstructures;2016-11
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