Observation of long photoluminescence decay times for high-quality GaN grown by metalorganic chemical vapor deposition
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1318396
Reference9 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
2. Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
3. Emission mechanisms of bulk GaN and InGaN quantum wells prepared by lateral epitaxial overgrowth
4. Time-resolved photoluminescence studies of free and donor-bound exciton in GaN grown by hydride vapor phase epitaxy
5. Neutral‐donor‐bound exciton recombination dynamics in GaN grown by metalorganic chemical vapor deposition
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