Radiative carrier lifetime, momentum matrix element, and hole effective mass in GaN
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.118293
Reference16 articles.
1. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
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3. Theoretical prediction of GaN lasing and temperature sensitivity
4. Free and bound excitons in thin wurtzite GaN layers on sapphire
5. High dislocation densities in high efficiency GaN‐based light‐emitting diodes
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