Modeling and Simulation of Fe-Doped GaN PCSS in High-Power Microwave
Author:
Affiliation:
1. Key Laboratory for Physical Electronics and Devices of the Ministry of Education, Xi’an Jiaotong University, Xi’an, China
2. Department of Microelectronics, School of Electronic and Information Engineering, Xi’an Jiaotong University, Xi’an, China
Funder
National Natural Science Foundation of China
Foundation of State Key Laboratory of Intense Pulsed Radiation Simulation and Effect
Fundamental Research Funds for Central Universities
Publisher
Institute of Electrical and Electronics Engineers (IEEE)
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Link
http://xplorestaging.ieee.org/ielx7/16/10159202/10130492.pdf?arnumber=10130492
Reference41 articles.
1. Wide Bandgap Extrinsic Photoconductive Switches
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4. Monte Carlo simulation of electron transport in the III-nitride wurtzite phase materials system: binaries and ternaries
5. Wide Bandgap Extrinsic Photoconductive Switches
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