Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe-Reference-Cited by-同舟云学术

Below band-gap optical absorption and photoluminescence excitation spectroscopy at room temperature in low-defect-density bulk GaN:Fe

Published:2012-01-16 Issue:3 Volume:100 Page:031908
ISSN:0003-6951
Container-title:Applied Physics Letters
language:en
Short-container-title:Appl. Phys. Lett.

Author:

Gladkov P.,Hulicius E.,Paskova T.,Preble E.,Evans K. R.

Publisher

AIP Publishing

Subject

Physics and Astronomy (miscellaneous)

Link

http://aip.scitation.org/doi/pdf/10.1063/1.3678195

Reference13 articles.

1. J. Blevins, “ Wide bandgap semiconductor substrates: Current status and future trends,” in Compound Semiconductor Manufacturing Technology Conference, May 2004, Miami, FL, USA.

2. 9.4-W/mm Power Density AlGaN–GaN HEMTs on Free-Standing GaN Substrates

3. AlGaN/GaN HEMTs on free-standing GaN substrates: MBE growth and microwave characterization

4. Properties of Fe-doped, thick, freestanding GaN crystals grown by hydride vapor phase epitaxy

5. GaN Substrates—Progress, Status, and Prospects

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