Bi-Related Below Band Gap Optical Absorption Band Produced in GaSbBi After Rapid Thermal Anneal at High Temperatures-Reference-Cited by-同舟云学术

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Bi-Related Below Band Gap Optical Absorption Band Produced in GaSbBi After Rapid Thermal Anneal at High Temperatures

Published:2019-06-03 Issue:8 Volume:48 Page:5131-5134
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:Journal of Elec Materi

Author:

Bhowal M. K.,Das Subhasis,Sharma A. S.,Dhar S.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/s11664-019-07313-4.pdf

Reference18 articles.

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2. S. Krishnamurthy, A. Sher, and A.-B. Chen, J. Appl. Phys. 88, 260 (2000).

3. H. Jiang, J.M. Hinckley, and J. Singh, Appl. Phys. Lett. 70, 1834 (1997).

4. A. Chandola, H.J. Kim, P.S. Dutta, S. Guha, L. Gonzalez, and V. Kumar, J. Appl. Phys. 98, 093103 (2005).

5. S.-H. Moon, H.-A. Do, J. Park, and S.-W. Ryu, J. Mater. Res. 24, 3569 (2009).

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Determination of the Complex Refractive Index of GaSb_1−xBi_x by Variable‐Angle Spectroscopic Ellipsometry;physica status solidi (a);2024-07-23

2. Influence of Pb vs Ga solvents during liquid phase epitaxy on the optical and electrical properties of GaSbBi layers;Journal of Applied Physics;2019-10-21

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