Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy-Reference-Cited by-同舟云学术

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Growth and X-ray Characterization of an InN Film on Sapphire Prepared by Metalorganic Vapor Phase Epitaxy

Published:1997-12-15 Issue:Part 2, No. 12B Volume:36 Page:L1625-L1627
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Chen Wei-Kuo,Pan Yung-Chung,Lin Heng-Ching,Ou Jehn,Chen Wen-Hsiung,Lee Ming-Chih

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 25 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Low-Temperature Grown INN Films Based on Sapphire Substrate with ECR-Plasma Enhanced MOCVD;PRICM;2013-09-06

2. Effects of valence band tails on the blue and red spectral shifts observed in the temperature-dependent photoluminescence of InN;physica status solidi (b);2013-03-22

3. Low-Temperature Grown InN Films Based on Sapphire Substrate with ECR-Plasma Enhanced MOCVD;Proceedings of the 8th Pacific Rim International Congress on Advanced Materials and Processing;2013

4. Influence of N 2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD;Chinese Physics Letters;2011-02

5. Porous Si(111) and Si(100) as an intermediate buffer layer for nanocrystalline InN films;Journal of Alloys and Compounds;2009-06

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