Effects of valence band tails on the blue and red spectral shifts observed in the temperature-dependent photoluminescence of InN-Reference-Cited by-同舟云学术

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Effects of valence band tails on the blue and red spectral shifts observed in the temperature-dependent photoluminescence of InN

Published:2013-03-22 Issue:8 Volume:250 Page:1572-1577
ISSN:0370-1972
Container-title:physica status solidi (b)
language:en
Short-container-title:Phys. Status Solidi B

Author:

Seetoh Ian P.¹,Soh Chew Beng²,Fitzgerald Eugene A.³,Chua Soo Jin¹²

Affiliation:

1. Singapore-MIT Alliance; National University of Singapore; 117576 Singapore Singapore

2. Institute of Materials Research and Engineering; A*STAR (Agency for Science, Technology and Research); 117602 Singapore Singapore

3. Massachusetts Institute of Technology; Cambridge 02139 Massachusetts USA

Funder

Institute of Materials Research and Engineering

Centre of Optoelectronics in NUS

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://onlinelibrary.wiley.com/wol1/doi/10.1002/pssb.201248552/fullpdf

Reference48 articles.

1. Cool white III-nitride light emitting diodes based on phosphor-free indium-rich InGaN nanostructures

2. Low-field electron mobility in wurtzite InN

3. Band Gap of InN and In-Rich InxGa1?xN alloys (0.36 < x < 1)

4. Analysis of InGaN-delta-InN quantum wells for light-emitting diodes

5. Approaches for high internal quantum efficiency green InGaN light-emitting diodes with large overlap quantum wells

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Molecular beam epitaxy of InN nanowires on Si;Journal of Crystal Growth;2015-10

2. Improvement in the internal quantum efficiency of InN grown over nanoporous GaN by the reduction of Shockley-Read-Hall recombination centers;Applied Physics Letters;2013-09-16

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