Analysis of InGaN-delta-InN quantum wells for light-emitting diodes
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.3493188
Reference38 articles.
1. III-Nitride Photonics
2. Origin of efficiency droop in GaN-based light-emitting diodes
3. Optimization of Light Extraction Efficiency of III-Nitride LEDs With Self-Assembled Colloidal-Based Microlenses
4. Continuous-wave Operation of AlGaN-cladding-free Nonpolarm-Plane InGaN/GaN Laser Diodes
5. Photoluminescence property of InGaN single quantum well with embedded AlGaN δ layer
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