Molecular beam epitaxy of InN nanowires on Si-Reference-Cited by-同舟云学术

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Molecular beam epitaxy of InN nanowires on Si

Published:2015-10 Issue: Volume:428 Page:59-70
ISSN:0022-0248
Container-title:Journal of Crystal Growth
language:en
Short-container-title:Journal of Crystal Growth

Author:

Golam Sarwar A.T.M.,Carnevale Santino D.,Kent Thomas F.,Laskar Masihhur R.,May Brelon J.,Myers Roberto C.

Funder

National Science Foundation CAREER Award

Publisher

Elsevier BV

Subject

Materials Chemistry,Inorganic Chemistry,Condensed Matter Physics

Reference37 articles.

1. P-GaN/N-InGaN/N-GaN double-heterostructure blue-light-emitting diodes;Nakamura;Jpn. J. Appl. Phys.,1993

2. High electron mobility transistor based on a GaN–Alx Ga1−x N heterojunction;Khan;Appl. Phys. Lett.,1993

3. Mixed Polarity in Polarization-Induced p–n Junction Nanowire Light-Emitting Diodes

4. Deep ultraviolet emitting polarization induced nanowire light emitting diodes with AlxGa1−xN active regions;Kent;Nanotechnology,2014

5. Design and characterization of GaN/InGaN solar cells;Jani;Appl. Phys. Lett.,2007

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Growth Mechanism and Properties of Self-Assembled InN Nanocolumns on Al Covered Si(111) Substrates by PA-MBE;Materials;2019-09-30

2. Hexagonal Nanopyramidal Prisms of Nearly Intrinsic InN on Patterned GaN Nanowire Arrays;Crystal Growth & Design;2018-01-25

3. Long-range ordered vertical III-nitride nano-cylinder arrays via plasma-assisted atomic layer deposition;Journal of Materials Chemistry C;2018

4. Low-RF-power growth of InN thin films by plasma-assisted reactive evaporation with a localized ion source;Materials Chemistry and Physics;2017-09

5. Growth of InN Nanowires with Uniform Diameter on Si(111) Substrates: Competition Between Migration and Desorption of In Atoms;Small;2017-04-06

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