Influence of N 2 Flux on InN Film Deposition on Sapphire (0001) Substrates by ECR-PEMOCVD
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy
Link
https://iopscience.iop.org/article/10.1088/0256-307X/28/2/028102/pdf
Reference28 articles.
1. InGaN/GaN/AlGaN-based laser diodes with cleaved facets grown on GaN substrates
2. Shortest wavelength semiconductor laser diode
3. Recent advances in InN-based solar cells: status and challenges in InGaN and InAlN solar cells
4. InN: A material with photovoltaic promise and challenges
5. Metalorganic chemical vapor deposition growth of InN for InN/Si tandem solar cell
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1. Refluxing synthesis of Mn‐doped ZnO nanoparticles and their applications in dielectric ceramics;Micro & Nano Letters;2019-02
2. Thermal stability and electrical properties of copper nitride with In or Ti;Chinese Physics B;2013-06
3. Adjusted surface work function of InN films annealed at vacuum and at high-pressure N2 conditions;Materials Letters;2013-03
4. Deposition and properties of highly c-oriented of InN films on sapphire substrates with ECR-plasma-enhanced MOCVD;Rare Metals;2012-03-30
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