Adjusted surface work function of InN films annealed at vacuum and at high-pressure N2 conditions-Reference-Cited by-同舟云学术

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Adjusted surface work function of InN films annealed at vacuum and at high-pressure N2 conditions

Published:2013-03 Issue: Volume:95 Page:135-138
ISSN:0167-577X
Container-title:Materials Letters
language:en
Short-container-title:Materials Letters

Author:

Liu W.F.,Luo Y.L.,Sang Y.C.,Bian J.M.,Zhao Y.,Liu Y.H.,Qin F.W.

Publisher

Elsevier BV

Subject

Mechanical Engineering,Mechanics of Materials,Condensed Matter Physics,General Materials Science

Reference17 articles.

1. Steady-State and Transient Electron Transport Within the III–V Nitride Semiconductors, GaN, AlN, and InN: A Review

2. Growth of InN layers on Si (111) using ultra thin silicon nitride buffer layer by NPA-MBE

3. High mobility InN epilayers grown on AlN epilayer templates

4. Synthesis and characterization of indium nitride nanowires by plasma-assisted chemical vapor deposition

Cited by 6 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Study on the Performance Impact of Introducing an InN Buffer Layer at Various Deposition Temperatures on InN Film Grown by ECR-PEMOCVD on Free-Standing Diamond Substrate;Coatings;2022-01-26

2. Effect of inserted InGaN layer on the two-dimensional electron gas in Al_xGa_1–xN/In_yGa_1–yN/GaN;Acta Physica Sinica;2021

3. Size-dependent surface potential of Si-doped InN nanorods and the role of inhomogeneous free-electron distribution;Journal of Applied Physics;2019-04-28

4. Independence of solitary-cation properties on the atomic neighborhood in In1−xGaxN alloys: A novel perspective for material engineering;Physical Review Materials;2017-11-29

5. Humidity sensing and resonant tunneling properties of indium nitride p-n device;Microelectronic Engineering;2017-03

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