Independence of solitary-cation properties on the atomic neighborhood in In1−xGaxN alloys: A novel perspective for material engineering-Reference-Cited by-同舟云学术

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Independence of solitary-cation properties on the atomic neighborhood in In1−xGaxN alloys: A novel perspective for material engineering

Published:2017-11-29 Issue:6 Volume:1 Page:
ISSN:2475-9953
Container-title:Physical Review Materials
language:en
Short-container-title:Phys. Rev. Materials

Author:

Filippone Francesco,Mattioli Giuseppe,Amore Bonapasta Aldo

Publisher

American Physical Society (APS)

Subject

Physics and Astronomy (miscellaneous),General Materials Science

Link

http://harvest.aps.org/v2/journals/articles/10.1103/PhysRevMaterials.1.064606/fulltext

Reference34 articles.

1. Microscopic theory of hydrogen in silicon devices

2. H-Induced Dangling Bonds in H–Isoelectronic-Impurity Complexes Formed inGaAs1−yNyAlloys

3. Connections between local and macroscopic properties in solids: The case of N in III-V-N alloys

4. Hybrid functional calculations of native point defects in InN

5. Controlling the conductivity of InN

Cited by 2 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Exceptional Hydrogen Uptake in Crystalline In_xGa_1–xN Semiconductors;ACS Applied Materials & Interfaces;2024-05-17

2. ONTOLOGIA E CIÊNCIA NA CRÍTICA DE NIETZSCHE À METAFÍSICA EM HUMANO, DEMASIADO HUMANO;Kriterion: Revista de Filosofia;2020-04

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