Exceptional Hydrogen Uptake in Crystalline InxGa1–xN Semiconductors-Reference-Cited by-同舟云学术

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Exceptional Hydrogen Uptake in Crystalline In_xGa_1–xN Semiconductors

Published:2024-05-17 Issue:21 Volume:16 Page:27268-27279
ISSN:1944-8244
Container-title:ACS Applied Materials & Interfaces
language:en
Short-container-title:ACS Appl. Mater. Interfaces

Author:

Ciatto Gianluca¹^ORCID,Filippone Francesco²^ORCID,Polimeni Antonio³^ORCID,Pettinari Giorgio⁴^ORCID

Affiliation:

1. Synchrotron SOLEIL, L’Orme des Merisiers, Saint-Aubin, BP48, 91192 Gif-sur-Yvette Cedex, France

2. National Research Council, Istituto di Struttura della Materia (ISM-CNR). Via Salaria Km 29.5, 00016 Monterotondo Stazione, Italy

3. Physics Department, Sapienza University of Rome. P.le A. Moro 2, 00185 Roma, Italy

4. National Research Council, Institute for Photonics and Nanotechnologies (IFN-CNR), Via del Fosso del Cavaliere 100, 00133 Roma, Italy

Publisher

American Chemical Society (ACS)

Link

https://pubs.acs.org/doi/pdf/10.1021/acsami.4c01371

Reference71 articles.

1. Superior radiation resistance of In1−xGaxN alloys: Full-solar-spectrum photovoltaic material system

2. Universal alignment of hydrogen levels in semiconductors, insulators and solutions

3. Hydrogenated Dilute Nitride Semiconductors

4. Local structure of Mn in hydrogenatedGa1−xMnxAs

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