Microanalysis of Impurity Contamination in Masklessly Etched Area Using Focused Ion Beam-Reference-Cited by-同舟云学术

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Microanalysis of Impurity Contamination in Masklessly Etched Area Using Focused Ion Beam

Published:1997-12-30 Issue:Part 1, No. 12B Volume:36 Page:7712-7716
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Park Yang-Keun,Takai Mikio,Nagai Takaaki,Kishimoto Takehisa,Lehrer Christoph,Frey Lothar,Ryssel Heiner

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 4 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Reduction of the divergence angle of an incident beam to enhance the demagnification factor of a two-stage acceleration lens in a gas ion nanobeam system of several tens of keV;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2018-04

2. Gas-assisted focused electron beam and ion beam processing and fabrication;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2008

3. Electrical characterization and Auger depth profiling of nanogap electrodes fabricated by I2-assisted focused ion beam;Applied Physics Letters;2006-10-23

4. Medium energy nuclear microprobe with enhanced sensitivity for semiconductor process analysis;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2001-07

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