Effect of Gas Species on the Depth Reduction in Silicon Deep-Submicron Trench Reactive Ion Etching-Reference-Cited by-同舟云学术

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Effect of Gas Species on the Depth Reduction in Silicon Deep-Submicron Trench Reactive Ion Etching

Published:1991-07-15 Issue:Part 1, No. 7 Volume:30 Page:1549-1555
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sato Masaaki,Kato Shin'ichi,Arita Yoshinobu

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Progress and perspectives in dry processes for nanoscale feature fabrication: fine pattern transfer and high-aspect-ratio feature formation;Japanese Journal of Applied Physics;2019-05-30

2. Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2006-11

3. Interlevel Dielectrics;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

4. Methods/Principles of Deposition and Etching of Thin Films;Handbook of Semiconductor Interconnection Technology, Second Edition;2006-02-22

5. Nanoscale structure fabrication of multiple AlGaSb∕InGaSb quantum wells by reactive ion etching with chlorine-based gases toward photonic crystals;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;2006

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