Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching-Reference-Cited by-同舟云学术

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Integrated framework for the flux calculation of neutral species inside trenches and holes during plasma etching

Published:2006-11 Issue:6 Volume:24 Page:2008-2020
ISSN:0734-2101
Container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films
language:en
Short-container-title:Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films

Author:

Kokkoris George,Boudouvis Andreas G.,Gogolides Evangelos

Publisher

American Vacuum Society

Subject

Surfaces, Coatings and Films,Surfaces and Interfaces,Condensed Matter Physics

Link

http://avs.scitation.org/doi/pdf/10.1116/1.2345643

Cited by 34 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Plasma etching of the trench pattern with high aspect ratio mask under ion tilting;Applied Surface Science;2022-09

2. Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon;Solid-State Electronics;2022-05

3. Fast and realistic 3D feature profile simulation platform for plasma etching process;Journal of Physics D: Applied Physics;2022-03-30

4. Modeling and analysis of sulfur hexafluoride plasma etching for silicon microcavity resonators;Journal of Micromechanics and Microengineering;2021-10-19

5. Large-scale pattern transfer based on non-through-hole AAO self-supporting membranes;Nanotechnology;2020-02-20

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