Phenomenological modeling of low-bias sulfur hexafluoride plasma etching of silicon

Author:

Aguinsky Luiz Felipe,Rodrigues Frâncio,Wachter Georg,Trupke Michael,Schmid Ulrich,Hössinger Andreas,Weinbub Josef

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference30 articles.

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2. Microfabrication of 3D silicon MEMS structures using gray-scale lithography and deep reactive ion etching;Waits;Sens Actuat A: Phys,2005

3. Novel resonant mems sensor for the detection of particles with dielectric properties in aged lubricating oils;Patocka;Sens Actuat A: Phys,2020

4. Isotropic silicon etch characteristics in a purely inductively coupled SF6 plasma;Panduranga;J Vacuum Sci Technol B, Nanotechnol Microelectron: Mater, Processing Meas, Phenomena,2019

5. Principles of Plasma Discharges and Materials Processing;Lieberman,2005

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