Hydrogen-Robust Submicron IrOx/Pb(Zr, Ti)O3/Ir Capacitors for Embedded Ferroelectric Memory-Reference-Cited by-同舟云学术

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Hydrogen-Robust Submicron IrOx/Pb(Zr, Ti)O3/Ir Capacitors for Embedded Ferroelectric Memory

Published:2001-04-30 Issue:Part 1, No. 4B Volume:40 Page:2911-2916
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Sakoda Tomoyuki,Moise Theodore S.,Summerfelt Scott R.,Colombo Luigi,Xing Guoqiang,Gilbert Stephen R.,Loke Alvin L. S.,Ma Shawming,Kavari Rahim,Wills Laura A.,Amano Jun

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 27 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ferroelectric Memory;Encyclopedia of Materials: Electronics;2023

2. The Past, the Present, and the Future of Ferroelectric Memories;IEEE Transactions on Electron Devices;2020-04

3. Reconstruction of IrO2/(Pb, La)(Zr, Ti)O3 (PLZT) interface by optimization of postdeposition annealing and sputtering conditions;Journal of Applied Physics;2019-08-21

4. The effects of layering in ferroelectric Si-doped HfO2 thin films;Applied Physics Letters;2014-08-18

5. Effect of porous alumina coatings on decreasing hydrogen damage to Pb(Zr,Ti)O3;Surface and Coatings Technology;2013-06

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