Device Quality SiO2Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating-Reference-Cited by-同舟云学术

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Device Quality SiO2Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating

Published:1992-10-01 Issue:Part 2, No. 10A Volume:31 Page:L1404-L1407
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Jiang Nan,Hugon Marie-Christine,Agius Bernard,Kretz Thierry,Plais Fran\ccois,Pribat Didier,Carriere Thierry,Puech Michel

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 31 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Silane injection in a high-density low-pressure plasma system and its influence on the deposition kinetics and material properties of SiO2;Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films;2008-09

2. Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing;Japanese Journal of Applied Physics;2007-11-06

3. High-Performance Polycrystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process;Japanese Journal of Applied Physics;2006-12-07

4. Process Integration Issues for Poly-Si TFT Fabrication;Thin Film Transistors;2004

5. High-Quality Gate-SiOxand SiOx/Si Interface Formation at Low Temperature Using Plasma-Enhanced Chemical Vapor Deposition;Japanese Journal of Applied Physics;2003-07-15

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