Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing-Reference-Cited by-同舟云学术

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Improvement in Characteristics of Thin Film Transistors upon High-Pressure Steam Annealing

Published:2007-11-06 Issue:11 Volume:46 Page:7208-7211
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Yamamoto Naoya,Watanabe Tomoyuki,Masaki Miyuki,Kawakami Ryusuke,Murayama Takahiko,Ohshita Yoshio,Ogura Atsushi,Yoshinouchi Atsushi

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Reference11 articles.

1. Device Quality SiO2Deposited by Distributed Electron Cyclotron Resonance Plasma Enhanced Chemical Vapor Deposition without Substrate Heating

2. High-Quality SiO2/Si Interface Formation and Its Application to Fabrication of Low-Temperature-Processed Polycrystalline Si Thin-Film Transistor

3. Low-Temperature Formation of Device-Quality SiO2/Si Interfaces Using Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposition

4. Defect reduction and surface passivation of SiO 2 /Si by heat treatment with high-pressure H 2 O vapor

5. Polycrystalline silicon thin-film transistors fabricated by defect reduction methods

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1. Improvement of negative bias temperature instability of LTPS TFTs by high pressure H2O annealing;Microelectronics Reliability;2021-01

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