High-Performance Polycrystalline Silicon Thin-Film Transistors with Low Trap Density at the Gate-SiO2/Si Interface Fabricated by Low-Temperature Process
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Published:2006-12-07
Issue:12
Volume:45
Page:9066-9068
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ISSN:0021-4922
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Container-title:Japanese Journal of Applied Physics
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language:en
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Short-container-title:Jpn. J. Appl. Phys.
Author:
Abe Daisuke,Inoue Satoshi,Shimoda Tatsuya
Subject
General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering