Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon-Reference-Cited by-同舟云学术

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Enhanced Diffusion and Lattice Location of Indium and Gallium Implanted in Silicon

Published:1973-05 Issue:5 Volume:12 Page:735-741
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Gamo Kenji,Iwaki Masaya,Masuda Kohzoh,Namba Susumu,Ishihara Shinji,Kimura Itsuro,Mitchell Ian V.,Ilic Gradimir,Whitton James L.,Davies John A.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Link

http://stacks.iop.org/1347-4065/12/i=5/a=735/pdf

Cited by 19 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Modeling of the transient interstitial diffusion of implanted atoms during low-temperature annealing of silicon substrates;Physica B: Condensed Matter;2012-06

2. Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements;Physica Status Solidi (a);1988-05-16

3. Highly activated shallow Ga profiles in silicon obtained by implantation and rapid thermal annealing;Applied Physics Letters;1987-09-28

4. The role of defects in the diffusion and activation of impurities in ion implanted semiconductors;Journal of Electronic Materials;1984-03

5. Range and range straggling of 15 to 350 keV 69Ga in amorphous silicon;Radiation Effects;1984-01

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