Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements-Reference-Cited by-同舟云学术

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Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements

Published:1988-05-16 Issue:1 Volume:107 Page:253-260
ISSN:0031-8965
Container-title:Physica Status Solidi (a)
language:de
Short-container-title:Phys. Stat. Sol. (a)

Author:

El-Haija A. J. Abu,Al-Saleh K. A.,Halim N. A.,Khalifeh J. M.,Saleh N. S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference28 articles.

1. The effects of ion implantation upon the mechanical properties of metals and cemented carbides

2. Continuous series of metastable Ag‐Cu solid solutions formed by ion‐beam mixing

3. Microalloying by ion-beam mixing

4. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures

Cited by 3 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam mixing and room temperature silicidation of Cu/Si(111) system by Ar+ ion irradiation;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;2000-03

2. GIXRD and XPS investigation of silicidation in ion beam mixed system;Solid State Communications;1998-07

3. A comparison of ion beam induced atomic mixing kinetics of Ti/Si, Fe/Si, and Ni/Si systems. In situ electrical resistance and RBS measurements;physica status solidi (a);1990-04-16

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