Ion beam mixing and room temperature silicidation of Cu/Si(111) system by Ar+ ion irradiation-Reference-Cited by-同舟云学术

Ion beam mixing and room temperature silicidation of Cu/Si(111) system by Ar+ ion irradiation

Published:2000-03 Issue: Volume:161-163 Page:992-996
ISSN:0168-583X
Container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
language:en
Short-container-title:Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms

Author:

Sarkar D.K.,Dhara S.,Nair K.G.M.,Chaudhury S.

Publisher

Elsevier BV

Subject

Instrumentation,Nuclear and High Energy Physics

Reference21 articles.

1. J.W. Mayer, S.S. Lau, in: J.M. Poate, G. Foti, D.C. Jacobson (Eds.), Surface Modification and Alloying by Laser, Ion and Electron Beams, Plenum Press, New York, 1983, p. 241

2. A. Gras-Marti, U. Littmark, in: R. Kelly, M.F. Da Silva (Eds.), Materials Modification by High-Fluence Ion Beams, Kluwer Academic, Dordrecht, 1987, p. 257

3. Theoretical aspects of atomic mixing by ion beams

4. Ion beam induced mixing of the Cu/Si system using electrical resistivity and RBS measurements

5. Change in the phase growth rates in Cu-Si films subjected to ion implantation

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