A comparison of ion beam induced atomic mixing kinetics of Ti/Si, Fe/Si, and Ni/Si systems. In situ electrical resistance and RBS measurements-Reference-Cited by-同舟云学术

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A comparison of ion beam induced atomic mixing kinetics of Ti/Si, Fe/Si, and Ni/Si systems. In situ electrical resistance and RBS measurements

Published:1990-04-16 Issue:2 Volume:118 Page:467-472
ISSN:0031-8965
Container-title:physica status solidi (a)
language:de
Short-container-title:phys. stat. sol. (a)

Author:

Al-Saleh K. A.,Jabr I. J.,Saleh N. S.

Publisher

Wiley

Subject

Condensed Matter Physics,Electronic, Optical and Magnetic Materials,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference20 articles.

1. Ion-beam-induced reactions in metal-semiconductor and metal-metal thin film structures

2. Ion beam mixing: Basic experiments

3. Fundamental aspects of ion beam mixing

4. Study of ion beam induced mixing in Sn/Si system using electrical resistivity measurements

Cited by 1 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion beam induced atomic mixing kinetics of Te/Cu and Te/Ag;Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms;1992-09

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