The role of defects in the diffusion and activation of impurities in ion implanted semiconductors-Reference-Cited by-同舟云学术

The role of defects in the diffusion and activation of impurities in ion implanted semiconductors

Published:1984-03 Issue:2 Volume:13 Page:401-436
ISSN:0361-5235
Container-title:Journal of Electronic Materials
language:en
Short-container-title:JEM

Author:

Farley C. W.,Streetman B. G.

Publisher

Springer Science and Business Media LLC

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Link

http://link.springer.com/content/pdf/10.1007/BF02656686.pdf

Reference115 articles.

1. J. Linhard, M. Scharff and H.E. Schiott, Mat. Fys. Medd. Dan. Vid. Selsk.33, 1 (1963).

2. J.F. Gibbons, Proc. IEEE,56, 295 (1968).

3. J.F. Gibbons, W.S. Johnson and S.W. Mylroie,Projected Range Statistics; Semiconductors and Related Materials, 2nd ed., Dowden Hutchinson & Ross, Inc., Stroudsburg, PA, 1975.

4. D.K. Brice,Ion Implantation Range and Energy Deposition Distributions, IFI/Plenum, New York, 1975.

5. J.F. Gibbons and S. Mylroie, Appl. Phys. Lett.22, 568 (1973).

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