Reproducible group‐V partial pressure rapid thermal annealing of InP and GaAs
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.346510
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3. A comparison of rapid thermal annealing and controlled atmosphere annealing of Si‐implanted GaAs
4. Arsenic Ambient Conditions Preventing Surface Degradation of GaAs during Capless Annealing at High Temperatures
5. The role of defects in the diffusion and activation of impurities in ion implanted semiconductors
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