High temperature annealing of GaN, InN, AlN and related alloys-Reference-Cited by-同舟云学术

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High temperature annealing of GaN, InN, AlN and related alloys

Published:1997-05 Issue:5 Volume:41 Page:681-694
ISSN:0038-1101
Container-title:Solid-State Electronics
language:en
Short-container-title:Solid-State Electronics

Author:

Hong J,Lee J.W,Vartuli C.B,Mackenzie J.D,Donovan S.M,Abernathy C.R,Crockett R.V,Pearton S.J,Zolper J.C,Ren F

Publisher

Elsevier BV

Subject

Materials Chemistry,Electrical and Electronic Engineering,Condensed Matter Physics,Electronic, Optical and Magnetic Materials

Reference27 articles.

1. Phase equilibria and vapor pressures of the system In+P

2. Laser Annealing of Semiconductors;Williams,1982

3. Ion implantation in GaAs

4. Transient thermal annealing in GaAs

Cited by 13 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Ion implantation in wide and ultra-wide bandgap semiconductors;Reference Module in Materials Science and Materials Engineering;2023

2. Large area and rapid electron beam annealing for high-quality epitaxial GaN layer;Materials Research Bulletin;2022-09

3. Wafer‐Scale InN/In 2 S 3 Core–Shell Nanorod Array for Ultrafast Self‐Powered Photodetection;Advanced Functional Materials;2021-12-16

4. Electron transport within the wurtzite and zinc-blende phases of gallium nitride and indium nitride;Journal of Materials Science: Materials in Electronics;2018-01-11

5. Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT;ECS Journal of Solid State Science and Technology;2018

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