Investigation of InAlN Layers Surface Reactivity after Thermal Annealings: A Complete XPS Study for HEMT
Author:
Publisher
The Electrochemical Society
Subject
Electronic, Optical and Magnetic Materials
Reference86 articles.
1. High quality InAlN single layers lattice-matched to GaN grown by molecular beam epitaxy
2. The Roles of Structural Imperfections in InGaN-Based Blue Light-Emitting Diodes and Laser Diodes
3. Influence of the barrier composition in GaN/InxAl1−xN quantum wells properties
4. High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN
5. Progresses in III-nitride distributed Bragg reflectors and microcavities using AlInN/GaN materials
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