Device Characteristics of Polycrystalline $\bf Si_{0.84}Ge_{0.16}$ Thin Film Transistors Grown from $\bf Si_{2}H_{6}$ and $\bf GeH_{4}$ Source Gases-Reference-Cited by-同舟云学术

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Device Characteristics of Polycrystalline $\bf Si_{0.84}Ge_{0.16}$ Thin Film Transistors Grown from $\bf Si_{2}H_{6}$ and $\bf GeH_{4}$ Source Gases

Published:1996-06-15 Issue:Part 2, No. 6B Volume:35 Page:L757-L759
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kim Jin-Won,Ryu Myung-Kwan,Kim Ki-Bum,Hwang Chang-Won,Bae Byung Seong,Han Min-Koo,Kim Sang-Joo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 9 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe;Applied Physics Letters;2006-11-06

2. Capas de SiGe policristalino hidrogenado y su aplicación en transistores de película delgada;Boletín de la Sociedad Española de Cerámica y Vidrio;2004-04-30

3. Métodos de reducción del tiempo de proceso y mejora estructural de capas de SiGe obtenidas por cristalización en fase sólida;Boletín de la Sociedad Española de Cerámica y Vidrio;2004-04-30

4. Transport Properties of Polycrystalline SiGe Thin Films Grown on SiO2;MRS Proceedings;2004

5. Nucleation site location and its influence on the microstructure of solid-phase crystallized SiGe films;Journal of Applied Physics;2001-09

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