Influence of Ge atoms on mobility and junction properties of thin-film transistors fabricated on solid-phase crystallized poly-SiGe
Author:
Publisher
AIP Publishing
Subject
Physics and Astronomy (miscellaneous)
Link
http://aip.scitation.org/doi/pdf/10.1063/1.2385086
Reference8 articles.
1. Solid phase crystallization of amorphous Si1−xGexfilms deposited on SiO2by molecular beam epitaxy
2. Solid-phase crystallization of amorphous SiGe films deposited by LPCVD on SiO2 and glass
3. Ge-induced enhancement of solid-phase crystallization of Si on SiO 2
4. Polycrystalline silicon-germanium thin-film transistors
5. Effects of Ge on Material and Electrical Properties of Polycrystalline Si1 − x Ge x for Thin‐Film Transistors
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1. Composition dependent properties of p- and n-type polycrystalline group-IV alloy thin films;Journal of Alloys and Compounds;2021-12
2. High-hole mobility Si1-Ge (0.1 ≤ x ≤ 1) on an insulator formed by advanced solid-phase crystallization;Journal of Alloys and Compounds;2018-10
3. Microscopic Understanding of the Carrier Transport Process in Ge Nanocrystals Films;Journal of Nanomaterials;2018-05-30
4. Effect of Boron Doping on High-Resolution X-Ray Diffraction Metrology;Journal of Applied Spectroscopy;2018-03
5. Structural and electrical properties of laser-crystallized nanocrystalline Ge films and nanocrystalline Ge/SiN x multilayers;Chinese Physics B;2013-10
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