Nucleation site location and its influence on the microstructure of solid-phase crystallized SiGe films
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.1389075
Reference19 articles.
1. Device Characteristics of Polycrystalline $\bf Si_{0.84}Ge_{0.16}$ Thin Film Transistors Grown from $\bf Si_{2}H_{6}$ and $\bf GeH_{4}$ Source Gases
2. Polycrystalline silicon thin films processed with silicon ion implantation and subsequent solid‐phase crystallization: Theory, experiments, and thin‐film transistor applications
3. Crystal grain nucleation in amorphous silicon
4. Crystallization of amorphous hydrogenated Si1−xGex films
5. Solid phase crystallization of amorphous Si1−xGexfilms deposited on SiO2by molecular beam epitaxy
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