Elemental Composition of Reactively Sputtered Indium Nitride Thin Films-Reference-Cited by-同舟云学术

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Elemental Composition of Reactively Sputtered Indium Nitride Thin Films

Published:1996-04-15 Issue:Part 1, No. 4A Volume:35 Page:2261-2265
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Kumar Sunil,Mo Li,Motlan Motlan,Tansley Trevor L.

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 30 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Role of growth pressure on Structural, optical and electrical properties of indium Nitride thin films prepared by modified activated reactive evaporation;Materials Today: Proceedings;2022

2. Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films;RSC Advances;2020

3. Nonequilibrium Plasma Aerotaxy of InN Nanocrystals and Their Photonic Properties;The Journal of Physical Chemistry C;2019-11-25

4. Low-temperature self-limiting atomic layer deposition of wurtzite InN on Si(100);AIP Advances;2016-04

5. Investigation of the electrochemical behavior of indium nitride thin films by plasma-assisted reactive evaporation;RSC Advances;2015

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