Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films-Reference-Cited by-同舟云学术

Elucidating the role of nitrogen plasma composition in the low-temperature self-limiting growth of indium nitride thin films

Published:2020 Issue:46 Volume:10 Page:27357-27368
ISSN:2046-2069
Container-title:RSC Advances
language:en
Short-container-title:RSC Adv.

Author:

Ilhom Saidjafarzoda¹²³^ORCID,Mohammad Adnan¹²³,Shukla Deepa¹²³⁴²,Grasso John⁵²³,Willis Brian G.⁵²³,Okyay Ali K.⁶⁷³^ORCID,Biyikli Necmi¹²³⁴²^ORCID

Affiliation:

1. Department of Electrical & Computer Engineering

2. University of Connecticut

3. USA

4. Department of Materials Science & Engineering

5. Department of Chemical and Biomolecular Engineering

6. Department of Electrical Engineering

7. Stanford University

Abstract

Hollow-cathode plasma-generated hydrogen radicals induce crystal phase transformation from h-InN to c-In₂O₃ during plasma-enhanced atomic layer deposition using trimethyl-indium and Ar/N₂ plasma.

Funder

University of Connecticut

National Science Foundation

Publisher

Royal Society of Chemistry (RSC)

Subject

General Chemical Engineering,General Chemistry

Link

http://pubs.rsc.org/en/content/articlepdf/2020/RA/D0RA04567E

Reference65 articles.

1. Indium nitride (InN): A review on growth, characterization, and properties

2. Electronic structure of superconducting InN

3. Fabrication and characterization of InGaN p-i-n homojunction solar cell

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