Highly Efficient InGaN-Based 383-nm Ultraviolet Light-Emitting Diodes Fabricated on Sapphire Substrate Using High-Temperature-Grown AlN Buffer
Author:
Publisher
IOP Publishing
Subject
General Physics and Astronomy,General Engineering
Link
http://stacks.iop.org/1882-0786/1/i=10/a=101101/pdf
Reference10 articles.
1. Effects of ain buffer layer on crystallographic structure and on electrical and optical properties of GaN and Ga1−xAlxN (0 < x ≦ 0.4) films grown on sapphire substrate by MOVPE
2. Highly P-Typed Mg-Doped GaN Films Grown with GaN Buffer Layers
3. Candela‐class high‐brightness InGaN/AlGaN double‐heterostructure blue‐light‐emitting diodes
4. Phosphor-Conversion White Light Emitting Diode Using InGaN Near-Ultraviolet Chip
5. Quaternary InAlGaN-based high-efficiency ultraviolet light-emitting diodes
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