Abstract
AbstractIn this study we report chip fabrication process that allows the laser lift-off of the sapphire substrate for the transfer of the GaN based thin film flip chip to the carrier wafer. The fabrication process includes 365-nm ultraviolet flip chip LED wafer align bonding with through-AlN-via wafer and sapphire laser lift-off. n-holes with the diameter of 100 µm were etched on the GaN epilayers for accessing n-type GaN. Through-AlN-via size was 110-µm and filled by Cu electroplating method for the electrical connection. Mechanical stabilization to prevent the GaN epilayers cracking and fragmentation during laser lift-off was achieved by utilizing epoxy based SU-8 photoresist support.
Funder
Korea Evaluation Institute of Industrial Technology
Publisher
Springer Science and Business Media LLC
Subject
Electrical and Electronic Engineering,Electronic, Optical and Magnetic Materials
Cited by
5 articles.
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