Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE-Reference-Cited by-同舟云学术

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Reduction of a Highly-Resistive Layer at an Interrupted-Interface of GaAs Grown by MBE

Published:1986-01-20 Issue:Part 1, No. 1 Volume:25 Page:95-98
ISSN:0021-4922
Container-title:Japanese Journal of Applied Physics
language:en
Short-container-title:Jpn. J. Appl. Phys.

Author:

Iimura Yasufumi,Takasugi Hidetoshi,Kawabe Mitsuo

Publisher

IOP Publishing

Subject

General Physics and Astronomy,Physics and Astronomy (miscellaneous),General Engineering

Cited by 14 articles. 订阅此论文施引文献订阅此论文施引文献，注册后可以免费订阅5篇论文的施引文献，订阅后可以查看论文全部施引文献

1. Effects of storage time of epi-ready InP:Fe substrates on the quality of metalorganic vapour phase epitaxial grown InP;Journal of Crystal Growth;1995-01

2. Molecular Beam Epitaxy of High-Quality GaAs and AlGaAs;Molecular Beam Epitaxy;1995

3. Silicon spikes and impurity accumulation at interrupted growth interfaces during molecular-beam epitaxy;Journal of Vacuum Science & Technology B: Microelectronics and Nanometer Structures;1993-07

4. The influence of substrate‐epitaxial layer chemical impurities on heterostructure electrical characteristics;Journal of Applied Physics;1992-04

5. Molecular beam epitaxy regrowth by use of ammonium sulfide chemical treatments;Applied Physics Letters;1990-03-12

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