The influence of substrate‐epitaxial layer chemical impurities on heterostructure electrical characteristics
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.350977
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2. Improving the etched/regrown GaAs interface by in-situ etching using tris-dimethylaminoarsenic;Journal of Crystal Growth;1997-05
3. Modeling temperature‐dependent photoreflectance spectra of single AlGaAs/GaAs modulation‐doped heterojunctions;Journal of Applied Physics;1995-11-15
4. Optical and electrical characterization of an AlGaAs/GaAs heterostructure;Journal of Applied Physics;1993-09
5. Re‐evaporation effects and optical properties of molecular‐beam‐epitaxial AlGaAs/GaAs/AlGaAs wells;Journal of Applied Physics;1993-08
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