Re‐evaporation effects and optical properties of molecular‐beam‐epitaxial AlGaAs/GaAs/AlGaAs wells
Author:
Publisher
AIP Publishing
Subject
General Physics and Astronomy
Link
http://aip.scitation.org/doi/pdf/10.1063/1.354823
Reference7 articles.
1. UV–Ozone Cleaning of GaAs for MBE
2. The influence of substrate‐epitaxial layer chemical impurities on heterostructure electrical characteristics
3. Carrier compensation at interfaces formed by molecular beam epitaxy
4. A proposal of a vacuum micro quantum interference transistor
5. Minority carrier lifetimes in molecular beam epitaxy grown AlxGa1−xAs/GaAs double heterostructures doped with aluminum
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